Published Work

RRAM · In-Memory Logic  First Author

Performance Investigation of HfO_x-Based 1-Transistor–1-Memristor Cell for In-Memory Logic Gates Implementation

A. K. Gupta, M. S. Yadav, B. Rawat

Investigates how a 1-transistor–1-memristor cell built on HfO_x performs when logic gates are implemented directly inside memory — a step toward computing where the data already lives.

RRAM · Neuromorphic

Unveiling the Role of Nanoscale-Thick Thermal Enhancement Layers in Tuning Analog Switching and Synaptic Plasticity of Memristor

M. S. Yadav, A. K. Gupta, B. Rawat

Studies how nanoscale-thick thermal enhancement layers tune a memristor's analog switching behavior and synaptic plasticity — connecting device-level thermal engineering to neuromorphic function.

RRAM · Crossbar  First Author

Device-circuit co-design of memristor based on niobium oxide for large-scale crossbar memory

A. K. Gupta, M. S. Yadav, B. Rawat

Co-designs a niobium-oxide memristor across the device and circuit levels so it can operate inside large-scale crossbar arrays, where device physics and array architecture cannot be treated separately.

RRAM

How Good Silicon Oxide-based Memristor Can be?

M. S. Yadav, A. K. Gupta, K. Varshney, B. Rawat

Assesses the realistic ceiling of silicon-oxide-based memristors — how far a CMOS-friendly oxide stack can be pushed as a resistive memory device.

RRAM · Crossbar

Design and modeling of niobium oxide–tantalum oxide based self-selective memristor for large-scale crossbar memory

A. K. Parit, M. S. Yadav, A. K. Gupta, A. Mikhaylov, B. Rawat

Designs and models a self-selective memristor combining niobium oxide and tantalum oxide for large-scale crossbar memory, where selector-less cells are essential.

2D FETs

Performance projection of 2-D material-based CMOS inverters for sub-10-nm channel length

A. Rawat, A. K. Gupta, B. Rawat

Projects how CMOS inverters built from 2-D materials behave at sub-10-nm channel lengths, benchmarking atomically thin channels as candidates for technology nodes beyond silicon.

RRAM  Equal Contribution

Role of Resistive Layer in Threshold Memory Switching Memristor Device

A. K. Gupta*, M. S. Yadav*, B. Rawat  (*equal contribution)

Examines how the resistive layer governs threshold switching in memory-switching memristor devices, informed by electro-thermal modeling of the switching stack.

2D FETs

Single and Multilayer Black Phosphorous-based CMOS Inverter for Deep Sub-10-nm Technology

A. Rawat, A. K. Gupta, B. Rawat

Explores single- and multilayer black-phosphorus CMOS inverters for deep sub-10-nm technology nodes — an early step into 2-D material device modeling.