Avinash Gupta



Analog Design Engineer

  • Website: www.avinash-gupta.com
  • Phone: +1 734 596 9029
  • City: Ann Arbor, Michigan
  • Degree: Master's in Electrical & Computer Engineering
  • Email: avinashg@umich.edu



Avinash Gupta

  • Bangalore,Karnataka, IN
  • +91-9877-469-093
  • avinash@shuzzly.in


Master's in Electrical & Computer Engineering

2022 - Present

University of Michigan Ann Arbor, USA

Pursuing Master's in ECE with a specialization in VLSI IC Design.

Bachelor of Technology in Electrical Engineering

2016 - 2020

Indian Institute of Technology, Ropar (IIT Ropar), IN

Graduated in Electrical Engineering with a focus in VLSI and nanomaterials.


2013 - 2015

Delhi Public School, Birgunj, NP

Topped Class-11 (Overall) and Class-12 (in Mathematics) Indian Embassy, Birgunj Region.

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Professional Experience

Analog Design Engineer

Since July 2020

Signalchip Innovations Pvt Ltd, Bangalore, IN

  • Design and testing of Active Tx and Rx Filter for 5G BW Modes.
  • Developing IBIS Models (ver 3.2) of DDR IO buffers, SGMII/ RGMII Tx/Rx Differential buffers.
  • Top-level simulation for Analog-RF Tx chain.

Junior Research Assistant (Internship)

June 2019 - Aug 2019

Prof. Hon Ki Tsang Lab, The Chinese University of Hong Kong (CUHK), Hong Kong (SAR)

  • Investigated the carrier dynamics in graphene-Si3N4 photodetectors.
  • Numerical Modeling of the carriers' drift-diffusion in MATLAB and extracted IV characteristics.
  • Experimental setup (device + circuit) is modeled in Cadence to match the experimental observation.

Research Contribution


  1. Avinash Kumar Gupta, M. S. Yadav and Brajesh Rawat, “Device-Circuit Co-design of Memristor based on Niobium Oxide for Large Scale Crossbar Memory,” IEEE Transaction on Very Large Scale Integration Systems, (Under Review, Preprint). (IF- 2.31).
  2. Akhilesh Rawat, Avinash Kumar Gupta and Brajesh Rawat, “Performance Projection of Two-dimensional Material based CMOS Inverters for Sub-10 nm Channel Length,” IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3622-3629, July 2021. (IF- 2.92).
  3. Aditya Kuber Parit, Mani Shankar Yadav, Avinash Kumar Gupta, Brajesh Rawat, “Design and modeling of Niobium Oxide-Tantalum Oxide-based self-selective memristor for large-scale crossbar memory,” Elsevier Chaos Solitons & Fractals Journal, vol. 145, p. 110818, March 2021. (Cited by-2, IF- 5.94).


  1. Mani Shankar Yadav, Avinash Kumar Gupta, Kanupriya Varshney and Brajesh Rawat, “How Good Silicon Oxide-based Memristor Can be?,” 35th IEEE International Conference on VLSI Design, Virtual, 26 Feb-2 Mar, 2022 (Accepted: Regular Paper).
  2. Avinash Kumar Gupta*, M. S. Yadav*, Brajesh Rawat, (*Equal Contribution), “Role of Resistive Layer in Threshold Memory Switching Memristor Device,” 4th International Conference on Memristive Materials, Devices and Systems (MEMRISYS), Tsukuba, Japan, 1-4 Nov, 2021 (Oral presentation).
  3. Akhilesh Rawat, Avinash Kumar Gupta, Brajesh Rawat, “High-Performance Single and Multilayer Black Phosphorous-based CMOS Inverter for Deep Sub-10-nm Technology,” 20th International Workshop on Physics of Semiconductor Devices, Kolkata, India, 17-20 Dec, 2019 (Poster presentation).

My Journey

Life is lifeless without its mess...

My Systems

Still working on the cookbook...